Title:
INTERLAYER INSULATION FILM FOR SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3113957
Kind Code:
B2
Abstract:
PURPOSE: To provide an interlayer insulation film for protecting elements against deterioration due to hot carrier.
CONSTITUTION: An overlying interlayer insulation film 13 is formed of a silicon oxide film containing a boron oxide or a phosphorus oxide in a semiconductor device. A water permeation preventive film 14 having high water blocking capacity is then formed as a silicon oxide film by ECR plasma CVD or as a silicon nitride film by plasma CVD or thermal decomposition CVD on the interlayer insulation film 13.
Inventors:
Yasuo Takahashi
Katsuyuki Machida
Kazuo Imai
Katsuyuki Machida
Kazuo Imai
Application Number:
JP32991392A
Publication Date:
December 04, 2000
Filing Date:
November 17, 1992
Export Citation:
Assignee:
Nippon Telegraph and Telephone Corporation
International Classes:
H01L21/314; H01L21/316; H01L21/318; (IPC1-7): H01L21/316
Domestic Patent References:
| JP215678A | ||||
| JP513404A | ||||
| JP63181434A | ||||
| JP562967A |
Attorney, Agent or Firm:
Masaki Yamakawa