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Patent Searching and Data


Title:
INTRINSIC JUNCTION FLUX QUANTUM MEMORY
Document Type and Number:
Japanese Patent JPH0974230
Kind Code:
A
Abstract:

To make the memory operate at the liquid nitrogen temperature exceeding 77K by a method wherein one of a tunnel type Josephson junction connected to a laminated structure made of a weak superconducting layer held by upper and lower superconducting electrodes is used as a memory state detecting element.

In the parts 1, 2 of laminated intrinsic junction, the strong superconducting electrode in Josephson layer structure works as the superconducting electrode of Josephson junction while the weak supercondicting layer works as the tunnel barrier layer of Josephson junction. That is, in these parts, the tunnel type SIS Josephson junction is laminated in multiple film thickness direction to be formed as so-called series connected intrinsic junction. At this time, the reading-out operation is performed by feeding reading-out control current to the reading-out control line 11. Since the laminated layer intrinsic junction is used for the rapid operation, the operational rate is featured by extreme rapidity. Through these procedures, the title intrinsic junction magnetic quantum memory can be operated even at the liquid nitrogen temperature exceeding 77K.


Inventors:
MIYAHARA KAZUNORI
KARIMOTO SHINICHI
KUBO SHUGO
SUZUKI MINORU
Application Number:
JP22682995A
Publication Date:
March 18, 1997
Filing Date:
September 04, 1995
Export Citation:
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Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
H01L39/22; G11C11/44; H01L39/24; (IPC1-7): H01L39/22; G11C11/44; H01L39/24
Attorney, Agent or Firm:
Yoshikazu Tani (1 person outside)