To provide an ion beam micromachining method for forming a fine circuit pattern used for a quantum device on the surface of a GaxIn1-xAsyP1-y surface, without the need for previously removing a surface oxide film of As2O3, As2O, Ga2O, etc., naturally formed on the surface of the GaxIn1-xAsyP1-y layer containing GaAs nor forming a mask for dry etching for forming a complicated fine circuit pattern.
After Ga ions, controlled to an arbitrary ion beam diameter and ion current density are injected into the surface of the GaxIn1-xAsyP1-y (0≤x, y≤1) which includes a single-body GaAs and InP substrate to substitute an oxide layer for Ga2O3 or Ga2O or product it by Ga ion implantation, in the presence of a surface oxide film formed on the surface of the GaxIn1-xAsyP1-y layer or by oxide molecule irradiation, the surface of the GaxIn1-xAsyP1-y layer is etched on a dry basis in a single-atom layer units with a brominated body to remove the surface oxide film other than the part substituted for Ga2O3 or Ga2O and the GaxIn1-xAsyP1-y layer.
ASAOKA YASUSHI
SANO NAOKATSU
| JPH0831775A | 1996-02-02 | |||
| JPH05109670A | 1993-04-30 | |||
| JPH10172912A | 1998-06-26 |