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Title:
ION IMPLANTATION DEVICE AND METHOD OF PROCESSING PLURAL WAFERS USING THE SAME
Document Type and Number:
Japanese Patent JP2017037717
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a technology of enhancing wafer transport capability in an ion implantation device.SOLUTION: A first transport mechanism 80 and a second transport mechanism 85 transport each pair of two wafers from a wafer container 59 to an alignment device 66 via a buffer device 60. After alignment, the wafers are supplied into a first load lock chamber 53 and a second load lock chamber 54, respectively. An intermediate transport mechanism 90 transports one of the paired two wafers from the first load lock chamber 53 to a vacuum processing chamber 16. After ion implantation processing, the wafer is transported from the vacuum processing chamber 16 to the first load lock chamber 53, and the other one of the paired two wafers is transported from the second load lock chamber 54 to the vacuum processing chamber 16. After ion implantation processing, the wafer is transported from the vacuum processing chamber 16 to the second load lock chamber 54. The first transport mechanism 80 and the second transport mechanism 85 move the two implanted wafers in pair from the first load lock chamber 53 and the second load lock chamber 54, to be stored in the wafer container 59.SELECTED DRAWING: Figure 1

Inventors:
KUDO TETSUYA
EBISU SHINJI
FUJII YOSHITO
Application Number:
JP2015156435A
Publication Date:
February 16, 2017
Filing Date:
August 06, 2015
Export Citation:
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Assignee:
SUMITOMO HEAVY IND ION TECH CO LTD
International Classes:
H01J37/317; H01L21/265; H01L21/677
Domestic Patent References:
JPH10135146A1998-05-22
JP2006156762A2006-06-15
Attorney, Agent or Firm:
Sakaki Morishita
Yusuke Murata
Tomoyuki Miki
Tomisho Teruo