To solve a problem of increase of cost since positive charges staying on a substrate surface is neutralized with the use of a neutralization device and excellent ion implantation is enabled by a conventional ion implanting device.
The ion implanting device is provided with a substrate retaining means 4 retaining a predetermined substrate, and ion irradiation means 21, 22 irradiation ion beams in vacuum to the substrate retained by the substrate retaining means and scanning onto X, Y directions. The substrate retaining means includes a substrate retaining part 41a provided with electrodes 42a to 42d for electrostatic chuck to attract substrate by static electricity, and is provided with at least one earth conductive plate spring 6 in a face contact to a rear face of a substrate after adsorbing the substrate to the substrate retaining part. By the ion irradiation means, the ion beams are scanned so as to be irradiated ion beams onto a surface of the plate spring extended outward from ah outer periphery of the substrate.
TOMITA MASATO
YOKOO HIDEKAZU
| JPH09275079A | 1997-10-21 | |||
| JPH07180053A | 1995-07-18 | |||
| JPH08138617A | 1996-05-31 | |||
| JPH03257745A | 1991-11-18 |