Title:
ION PLATING DEVICE
Document Type and Number:
Japanese Patent JPH01176072
Kind Code:
A
Abstract:
PURPOSE:To enable ion plating even at a low degree of vacuum by carrying out evaporation from an evaporating source by arc discharge. CONSTITUTION:Low pressure gas is introduced into the vacuum chamber 5 of an ion plating device 2, an electric field is applied to generate plasma and particles evaporated from an evaporating source 6 are ionized by passing through the plasma region. The ionized particles are accelerated and collided against a substrate 9 having the opposite polarity to form a film. In the ion plating device, an arc nozzle 1 is set. The nozzle 1 is an arc nozzle for forming a thin film used to synthesize diamond, etc., and consists of a tubular outer electrode 20 of graphite, a cylindrical inner electrode 21 of graphite at the center of the electrode 20 and a tip nozzle 22. Voltage is impressed between the electrodes 20, 21, an inert gas is fed to generate arc plasma by arc discharge and the plasma is jetted from the tip nozzle 22 toward the evaporating source 6 to evaporate particles.
Inventors:
KANO HIROSHI
KURODA SUMIO
NAKADA MASAHIRO
SHONO KEIJI
KURODA SUMIO
NAKADA MASAHIRO
SHONO KEIJI
Application Number:
JP33222187A
Publication Date:
July 12, 1989
Filing Date:
December 29, 1987
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
C23C14/32; (IPC1-7): C23C14/32
Attorney, Agent or Firm:
Sadaichi Igita
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