IRIDIUM TIP, GAS FIELD ION SOURCE, FOCUSED ION BEAM APPARATUS, ELECTRON SOURCE, ELECTRON MICROSCOPE, ELECTRON BEAM APPLIED ANALYZER, ION ELECTRON BEAM COMPOSITE APPARATUS, SCANNING PROBE MICROSCOPE AND MASK CORRECTION DEVICE

Japanese Patent JP2015057764

A

PROBLEM TO BE SOLVED: To provide a pyramid structure of an iridium tip with a single atom at the tip, which can be produced with a high positional repeatability, and to allow the single atom at the tip to be able to hold for a long period of time while preventing adhesion of impurity.SOLUTION: The iridium tip has a pyramid structure having a sharpened tip part of monocrystal of <210> orientation. The tip is composed of only a single iridium atom of a {210} crystal plane which is enclosed by one {100} crystal plane and two {111} crystal planes. On the first layer, the single iridium atom is positioned to form the tip of the pyramid structure. On the second layer immediately below the first layer, three iridium atoms are positioned to form apex of a triangle. On the third layer immediately below the second layer, six iridium atoms are positioned at the apexes and sides of a triangle.

JP6112930	A gas ion source and a focused ion beam device
JPS60236442	LIQUID METAL ION SOURCE

KOSAKAI TOMOKAZU
MATSUDA OSAMU
SUGIYAMA YASUHIKO
AIDA KAZUO
ARAMAKI BUNRO
YASAKA KOJIN
OBA HIROSHI

JP2014146186A

March 26, 2015

July 16, 2014

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HITACHI HIGH TECH SCIENCE CORP

H01J27/26; G01Q70/14; G03F1/74; H01J37/073; H01J37/08; H01J37/252; H01J37/26; H01J37/317

JP2013054911A	2013-03-21
JP2009238443A	2009-10-15
JP2009107105A	2009-05-21

US20130122774A1

2013-05-16

Masatake Shiga
Shingo Suzuki
Nishizawa Kazu -- pure

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