To provide a laser diode structure that improves sensitivity of detection of a gas by reducing interference of a laser beam.
The laser diode structure 1 for use in gas detection includes a hermetically sealed casing 2 having an electric coupling portion 3, a bottom portion 4 and a window 5. A laser diode chip 6 and temperature control portions 9, 12 for the chip are provided in the casing 2. A thermoelectric element 12 serving as a Peltier element as a part of the temperature control portions is coupled to the bottom portion 4 of the casing 2 through a bottom surface 13, and coupled to the laser chip 6 through an upper surface 11. A temperature-controlled beam shaping member 14 which is provided between the diode chip 6 and window 5 and dims the laser beam 7, emitted from an opening of the laser diode chip 6, in parallel before the laser beam 7 passes through the window 5. The beam shaping member 14 in contact with the laser diode chip 6 is preferably in surface-to-surface contact with or bonded to the opening 8 through its boundary surface 16, or formed integrally with the opening 8.
PROTASIO RUI
GAILLARD MATHIEU
| JP2009515159A | 2009-04-09 | |||
| JP2002185071A | 2002-06-28 | |||
| JP2006128217A | 2006-05-18 | |||
| JP2001264662A | 2001-09-26 | |||
| JPS5187984A | 1976-07-31 | |||
| JPS5538065A | 1980-03-17 | |||
| JPH08247939A | 1996-09-27 | |||
| JP2009515159A | 2009-04-09 | |||
| JP2002185071A | 2002-06-28 | |||
| JP2006128217A | 2006-05-18 | |||
| JPH09307144A | 1997-11-28 |
| WO1997040558A1 | 1997-10-30 |
Nishio Mira
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