Title:
LATERAL TYPE SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3519173
Kind Code:
B2
Abstract:
PURPOSE: To shorten turn-off time and to contrive reduction in switching time on a lateral type semiconductor device for a low on-voltage switching utilizing the conductivity modulation action by minority carrier injection.
CONSTITUTION: In a lateral type IGBT on which the epitaxial layer on a P- substrate is used as an N-drift layer 2, a P-base region 5, a P-emitter region 6 and a P-collector region 12, etc., are formed on the surface of the N-drift layer 2, electrodes are provided, the P-substrate 1 is irradiated with protons from the backside and heat-treated to distribute a life-time killer unevenly, so that the life-time of the carrier of the P-substrate 1 is made shorter than the N-drift layer. As a result, the current path does not spread to the deep part of the P-substrate when the IGBT is turned on, there is no sweep-out of an excessive carrier form the P-substrate 1 when the IGBT is turned off, and the turn-off time can be cut down. A diode, a transistor, a thyristor, an MCT, a dual gate TGBT, a dual gate MCT, a MOSFET, a SITH, etc., may be used as a semiconductor element instead of the IGBT.
Inventors:
Kumagai, Naoki
Application Number:
JP14703895A
Publication Date:
April 12, 2004
Filing Date:
June 14, 1995
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD
International Classes:
H01L29/68; H01L21/331; H01L29/06; H01L29/73; H01L29/732; H01L29/74; H01L29/749; H01L29/78; H01L29/861; (IPC1-7): H01L29/06; H01L21/331; H01L29/73; H01L29/74; H01L29/78; H01L29/861
Attorney, Agent or Firm:
篠部 正治
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