To provide a wire bonding type LED device which has excellent gas barrier properties and heat resistance and achieves high light extraction efficiency, and to provide a manufacturing method of the LED device.

The LED device includes: a substrate where multiple lead frames are disposed; an LED chip which is disposed on the substrate and emits light having a specific wavelength; wires which electrically connect the lead frames with an upper surface of the LED chip; a translucent layer which covers the lead frames and includes polysiloxane; and a wavelength conversion layer which is disposed on the translucent layer and contains a transparent resin and a phosphor. In the LED device, the translucent layer does not contact with a contact end part of each wire, which contacts with the lead frame, and/or a contact end part of each wire which contacts with the LED chip.