Title:
LIGHT EMISSION SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5636181
Kind Code:
A
Abstract:
PURPOSE: To produce a light emission region prescribing layer without inserting an etching process halfway, by using a substrate having stripe projections on the surface.
CONSTITUTION: A substrate 17 is etched to make a projection 17A. A light emission region prescribing layer 16, a clad layer 15,... and a contact layer 12 are then sequentially grown. The thickness of the clad layer 15, an active layer 14, another clad layer 13 and the contact layer 12 is 0.2∼0.4μm, 0.1∼0.2μm, approx. 1μm and 0.5μm, respectively. While the width of the projection 17A of the substrate is 3∼8μm.
Inventors:
NISHI HIROSHI
YANO MITSUHIRO
TAKUSAGAWA KIMITO
KUMAI TSUGIO
NISHITANI YORIMITSU
YANO MITSUHIRO
TAKUSAGAWA KIMITO
KUMAI TSUGIO
NISHITANI YORIMITSU
Application Number:
JP11132879A
Publication Date:
April 09, 1981
Filing Date:
August 31, 1979
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L33/14; H01L33/30; H01S5/00; H01S5/223; (IPC1-7): H01L33/00; H01S3/18