Title:
LIQUID PHASE EPITAXIAL GROWING METHOD
Document Type and Number:
Japanese Patent JPS5515940
Kind Code:
A
Abstract:
PURPOSE:To grow an epitaxial layer of a uniform thickness by a liuyid phase growing method by putting a lid covering the surface of a soln. and by forming the under surface of the lid into an inclined or curved surface canceling the thickness distribution of crystals on a substrate. CONSTITUTION:Soln. 12 for growth is housed in the opening of slider 11 sliding on support stand 10 provided with a recess holding substrate 2. The upper surface of soln. 12 is covered with interlocking type lid 13 with a predetermined inclined or curved under surface canceling the thickness distribution of crystals on substrate 2. A cpd. semiconductor and mixed crystals thereof are grown on substrate 2.
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Inventors:
KANEDA KOUICHI
Application Number:
JP8680878A
Publication Date:
February 04, 1980
Filing Date:
July 18, 1978
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
C30B19/00; H01L21/208; (IPC1-7): C30B19/00; H01L21/208