Title:
LITHIUM NIOBATE SINGLE CRYSTAL FILM AND ITS PRODUCTION
Document Type and Number:
Japanese Patent JP3218078
Kind Code:
B2
Abstract:
PURPOSE: To obtain a single crystal film which is not cracked at the time of growing a desired single crystal film on a single crystal substrate of lithium niobate having a congruent composition by growing an epitaxially grown single crystal transition layer in between to suppress the stress and strain.
CONSTITUTION: An epitaxially grown single crystal transition layer is provided on a substrate consisting of a lithium niobate single crystal having a congruent composition. The transition layer is formed at the growth temp. changing rate of ≤10°C/min through the growth. The lattice constant is continuously changed in the epitaxial growth direction between the desired single crystal having different lattice constant and the single crystal substrate. Accordingly, a single crystal having ≤0.002&angst lattice constant different from the substrate is continuously changed to a single crystal having ≤0.002&angst lattice constant different from the desired single crystal. The growth temp. is then kept constant, and a desired single crystal is grown.
Inventors:
Shou Meguro
Application Number:
JP13012892A
Publication Date:
October 15, 2001
Filing Date:
April 22, 1992
Export Citation:
Assignee:
Tokin Co., Ltd.
International Classes:
C30B19/00; C30B19/12; C30B29/30; G02B6/02; G02B6/12; G02B6/10; (IPC1-7): C30B29/30; C30B19/00; C30B19/12
Domestic Patent References:
| JP5117096A | ||||
| JP558792A | ||||
| JP437698A | ||||
| JP63270396A |