Title:
集積回路薄膜キャパシタの低温成長及び超高速アニーリング
Document Type and Number:
Japanese Patent JP5220619
Kind Code:
B2
Abstract:
Some embodiments of the invention include thin film capacitors formed on a package substrate of an integrated circuit package. At least one of the film capacitors includes a first electrode layer, a second electrode layer, and a dielectric layer between the first and second electrode layers. Each of the first and second electrode layers and the dielectric layer is formed individually and directly on the package substrate. Other embodiments are described and claimed.
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Inventors:
Salama, Islam
Min, Yonki
Min, Yonki
Application Number:
JP2008551578A
Publication Date:
June 26, 2013
Filing Date:
March 19, 2007
Export Citation:
Assignee:
Intel Corporation
International Classes:
H01L23/12; H01G4/12; H01G4/30; H01L25/00
Domestic Patent References:
| JP2000306767A | ||||
| JP9219587A | ||||
| JP2001223301A | ||||
| JP2003068923A | ||||
| JP2007173386A |
Attorney, Agent or Firm:
Tadahiko Ito
Shinsuke Onuki
Tadashige Ito
Shinsuke Onuki
Tadashige Ito