Title:
シリコン含有2層レジスト用下層レジスト組成物
Document Type and Number:
Japanese Patent JP4139575
Kind Code:
B2
Abstract:
To provide a lower layer resist composition for a silicon-containing two-layer resist, which is excellent in the dry etching resistance and film thickness uniformity.A lower layer resist composition for a silicon-containing two-layer resist, comprising (a) a phenol-based polymer, (b) a compound capable of generating a sulfonic acid at a temperature of 100° C. or more, (c) a phenol-based acid crosslinking agent having two or more benzene rings and capable of crosslinking with the polymer under the action of an acid, and (d) a solvent.
Inventors:
Shoichiro Anami
Kazuyoshi Mizutani
Kazuyoshi Mizutani
Application Number:
JP2001115597A
Publication Date:
August 27, 2008
Filing Date:
April 13, 2001
Export Citation:
Assignee:
FUJIFILM Corporation
International Classes:
G03F7/11; C08K5/00; C08L25/18; C08L61/10; G03F7/038; G03F7/075; G03F7/095; G03F7/26; H01L21/027
Domestic Patent References:
| JP2000321776A | ||||
| JP2000267265A | ||||
| JP2001051417A |
Attorney, Agent or Firm:
Takeshi Takamatsu
Kiyozumi Yazawa
Kiyozumi Yazawa