Title:
LUMINOUS SURFACE TYPE SEMICONDUCTOR LIGHT-EMITTING ELEMENT FORMED ON INSULATING SUBSTRATE
Document Type and Number:
Japanese Patent JPS57111077
Kind Code:
A
Abstract:
PURPOSE:To increase the brightness of the emitted light of the subject light emitting element by a method wherein a P-N junction surface is formed obliquely or nearly in parallel to a semiinsulator substrate. CONSTITUTION:A P type semiconductor layer 52 and an N type semiconductor layer 53 are provided on the semiinsulator substrate 51, the layer band gap on the side where the light of the junction surface is picked out is longer or to be equalized, and a semiconductor light-emitting element, having a junction surface 54, is obtained by providing a P type electrode 55 and an N type electrode 56 on the upper part of the substrate 51. And the junction surface 54 is to be formed obliquely or almost in parallet to the semiinsulator substrate 51. Accordingly, as the light-emitting surface is inclined, an apparent light-emitting area is reduced, and as a result, the brightness of the emitted light can be increased apparently.
Inventors:
OKUDA HIROSHI
KIKUCHI KENICHI
KIKUCHI KENICHI
Application Number:
JP18735880A
Publication Date:
July 10, 1982
Filing Date:
December 26, 1980
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
H01L21/86; H01L33/30; H01L33/40; (IPC1-7): H01L21/86; H01L33/00