Title:
MULTIWAVELENGTH LIGHT-EMITTING ELEMENT
Document Type and Number:
Japanese Patent JPS57111078
Kind Code:
A
Abstract:
PURPOSE:To contract the light-emitting region while the current path is squeezed also by a method wherein, in an N-P-N structure or a P-N-P structure, a P type layer is buried in an N type layer, or on the contrary, the N type layer is buried in the P type layer. CONSTITUTION:A current shielding layer 2, an N-InP layer 3, an active layer (wavelength lambda1) 4, a P-InP layer 5, an active layer (wavelength lambda2) 6, and an N-InP layer 7 are provided on an N-InP substrate 1. And the wavelength of an emitted light is made longer for an active layer (light emitting region) in proportion to going into the inner part viewed from the side where the light is picked out, no light is to be absorbed in the active region on the midway, and each active layer is formed into a double-hetero structure wherein the active layer is pinched by the material having a large band gap. And the P type layer is buried in the N type layer when the light-emitting region is contracted using the N-P-N structure, the light-emitting region is contracted after the flow of current is stopped and the light-emitting region of the active layer 6 is contracted by an N-electrode 8A, thereby enabling to emit the light of lambda2>lambda1 from the narrow region of 10 or 20.
Inventors:
OKUDA HIROSHI
Application Number:
JP18735980A
Publication Date:
July 10, 1982
Filing Date:
December 26, 1980
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
H01L33/14; H01L33/30; H01L33/40; (IPC1-7): H01L33/00