MANUFACTURING METHOD OF GALLIUM NITRIDE (GaN) SELF-STANDING SUBSTRATE AND MANUFACTURING APPARATUS OF THE SAME

Japanese Patent JP2014172797

A

PROBLEM TO BE SOLVED: To provide a manufacturing method of a high-quality GaN self-standing substrate which suppresses generation of a crack caused by stress during growth of a thin film layer.SOLUTION: In a vapor growth method, a substrate and raw material for forming GaN are prepared. In a temperature of a first temperature region, a surface of the substrate is nitrided to form a nitride crystal nucleus with which GaN is formed. In a temperature of a second temperature region which is lower than that of the first temperature region, a GaN thin film layer, which includes a C-axis oriented GaN crystal and non-C-axis oriented GaN crystal, is formed on the nitride crystal nucleus. In a temperature of a third temperature region which is lower than that of the first temperature region and higher than that of the second temperature region, the GaN thin film layer is grown to a predetermined thickness. In a temperature of a fourth temperature region which is higher than that of the third temperature region, the C-axis oriented GaN crystal selectively grows, and the C-axis oriented GaN crystals meet each other to form a GaN layer. In a fifth temperature region, the GaN layer is grown at a higher speed than that in the fourth temperature region.

GOTO HIDEKI
SATO AKIRA
SETO RITSU
SHIINA SHIGEO

JP2013048128A

September 22, 2014

March 11, 2013

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AETECH CORP

C30B29/38; C30B25/16; H01L21/205

Katsunuma Hirohito
Takeshi Katada

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