To provide a material excellent in saturation characteristics under low temperature firing conditions or under short time firing conditions by a rapid heating method and capable of producing a Bi based ferroelectric element having a hysteresis curve with a good squareness ratio, a high polarization value (Pr value) and improved hysteresis characteristics and to provide a Bi based ferroelectric element using the material and a method for producing the element.
The material for forming a Bi based ferroelectric thin film contains a halogen element. A Bi system ferroelectric thin film formed by applying the material is provided. In the method for producing a Bi based ferroelectric element, the element is produced using the thin film by a rapid heating method.
KAWAKAMI ATSUSHI
KUMAGAI TOMOYA
