Title:
磁気トンネル接合素子およびその形成方法
Document Type and Number:
Japanese Patent JP4732799
Kind Code:
B2
Abstract:
An MTJ (magnetic tunneling junction) device particularly suitable for use as an MRAM (magnetic random access memory) or a tunneling magnetoresistive (TMR) read sensor, is formed on a seed layer which allows the tunneling barrier layer to be ultra-thin, smooth, and to have a high breakdown voltage. The seed layer is a layer of NiCr which is formed on a sputter-etched layer of Ta. The tunneling barrier layer for the MRAM is formed from a thin layer of Al which is radically oxidized (ROX), in-situ, to form the layer with characteristics described above. The tunneling barrier layer for the read sensor formed from a thin layer of Al or a HfAl bilayer which is naturally oxidized (NOX), in-situ, to form the barrier layer. The resulting device has generally improved performance characteristics in terms of GMR ratio and junction resistance.
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Inventors:
Hongseong
Six waves
Baby boiled
Chen Yuka
Six waves
Baby boiled
Chen Yuka
Application Number:
JP2005147225A
Publication Date:
July 27, 2011
Filing Date:
May 19, 2005
Export Citation:
Assignee:
Headway Technologies, Inc.
International Classes:
G11B5/39; H01L43/08; G11C11/15; G11C11/16; H01F10/30; H01F10/32; H01F41/18; H01F41/30; H01L21/8246; H01L27/105; H01L43/10; H01L43/12
Domestic Patent References:
| JP2002280641A | ||||
| JP2002204002A | ||||
| JP2002151756A | ||||
| JP2003031870A | ||||
| JP2003016613A | ||||
| JP2002314164A |
Foreign References:
| US20040042128 |
Attorney, Agent or Firm:
Yasushi Santanzaki