Title:
MAGNETIC TUNNEL JUNCTION ELEMENT, JUNCTION MEMORY CELL, AND JUNCTION MAGNETIC FIELD SENSOR
Document Type and Number:
Japanese Patent JP3277144
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To optimize controllability in a central magnetic field region of a response curve by positioning an insulation tunnel layer between a fixed ferromagnetic layer and a free ferromagnetic layer on a board and positioning a non-ferromagnetic surface phase layer between an insulation tunnel layer and one of ferromagnetic layers.
SOLUTION: An Al2O3 tunnel/barrier layer 20 which can make a tunnel current flow in an almost vertical direction is provided between a fixed ferromagnetic layer 18 which is above a board 9 and is fixed in a proper direction when application magnetic field exists and a free ferromagnetic layer 32 wherein magnetization is freely rotative. Furthermore, a non-ferromagnetic surface phase layer 31 which weakens magnetic combination between the fixed ferromagnetic layer 18 and the free ferromagnetic layer 32 is inserted between the barrier layer 20 and the free ferromagnetic layer 32. When applied magnetic field is in a favorable range, the fixed ferromagnetic layer 18 contains a high coercive force material (ternary alloy such as CoPtCr) to be pinned by proper magnetic anisotropy and have a remaining moment of magnetic field close to zero magnetic field.
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Inventors:
Stuart Stefan Papworth Perkin
Application Number:
JP27623897A
Publication Date:
April 22, 2002
Filing Date:
October 08, 1997
Export Citation:
Assignee:
INTERNATIONAL BUSINESS MASCHINES CORPORATION
International Classes:
G01R33/06; G01R33/09; G11B5/39; G11C11/15; G11C11/16; H01F10/08; H01F10/16; H01F10/32; H01L21/8246; H01L27/105; H01L43/00; H01L43/08; (IPC1-7): H01L43/08; G01R33/09; G11B5/39; G11C11/15
Domestic Patent References:
| JP6244477A | ||||
| JP563254A | ||||
| JP9128719A | ||||
| JP9106514A | ||||
| JP8504303A |
Attorney, Agent or Firm:
Hiroshi Sakaguchi (1 person outside)