Title:
MAGNETISM DETECTOR
Document Type and Number:
Japanese Patent JPH01181483
Kind Code:
A
Abstract:
PURPOSE:To improve sensibility by forming an active layer sensitive to magnetism onto a semiconductor substrate and specifying the ratio of a distance of the area where current flow in the active layer to a distance of the area where magnetoelectromotive force perpendicular to the former distance is generated. CONSTITUTION:An active layer 6 sensitive to magnetism is shaped on a semiconductor substrate 1, and the ratio W/l of a distance l of the area where current flow in the active layer 6 to a distance W of the area where magnetoelectromotive force perpendicular to the distance l is generated is set three or more. The relationship between the W/l and relative sensitivity is shown in the graph, but the sensibility is not increased so much when the W/l is above 3 though it has an inclination in which it augments together with the W/l as a whole. When the relative sensitivity is increased, there is an optimum ratio because the rate of increase is reduced. When the W/l is increased, the output impedance increases depending upon the W/l. Accordingly, a magnetism detector having high sensitivity is acquired.
Inventors:
FUKUDA KATSUYOSHI
INOUE KAZUHIKO
INOUE KAZUHIKO
Application Number:
JP255888A
Publication Date:
July 19, 1989
Filing Date:
January 11, 1988
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L43/06; (IPC1-7): H01L43/06
Attorney, Agent or Firm:
Noriyuki Noriyuki (1 person outside)