To provide a magnetoresistive effect element capable of obtaining a high MR ratio while suppressing noise and the influence of spin torque, to provide a thin film magnetic head having this magnetoresistive effect element, to provide a head gimbal assembly, to provide a head arm assembly, and to provide a magnetic disk device.
An MR (magnetoresistance) element 5 is provided with: a free layer 25 changing the direction of magnetization according to a signal magnetic field; a pinned layer 23 having a fixed direction of magnetization; and a spacer layer 24 that is arranged between them. The spacer layer 24 has: a first nonmagnetic metal layer 41 and a second nonmagnetic metal layer 43 that are each formed of a nonmagnetic metal material; and a semiconductor layer 42 that is formed of a material containing an oxide semiconductor and arranged between the first nonmagnetic metal layer 41 and the second nonmagnetic metal layer 43. The areal resistance of the MR element 5 is within a range of 0.1 to 0.3 m2, and the conductivity of the spacer layer 24 is within the range of 133 to 432 S/cm.
HIRATA KYO
MIZUNO TOMOHITO
SHIMAZAWA KOJI
| JP2003298143A | 2003-10-17 | |||
| JP2003008102A | 2003-01-10 | |||
| JPH10223942A | 1998-08-21 | |||
| JP2004076025A | 2004-03-11 | |||
| JP2001068730A | 2001-03-16 |
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