Title:
磁気抵抗効果素子及び磁気メモリ装置
Document Type and Number:
Japanese Patent JP4100025
Kind Code:
B2
Abstract:
Write characteristics and read characteristics can be improved at the same time by applying novel materials to ferromagnetic layers. In a magneto resistive effect element having a pair of ferromagnetic layers being opposed to each other through an intermediate layer to cause a current to flow in the direction perpendicular to the film plane to obtain a magnetoresistive change, at least one of the ferromagnetic layers contains a ferromagnetic material containing Fe, Co and B. The ferromagnetic material should preferably contain FeaCobNicBd (in the chemical formula, a, b, c and d represent atomic %. 5≰a≰45, 35≰b≰85, 0≰c≰35, 10≰d≰30, a+b+C+d=100).
Inventors:
Masatoshi Hosomi
Tetsuya Mizuguchi
Kazuhiro Oba
Kazuhiro Bessho
Tetsuya Yamamoto
Hiroshi Kano
Tetsuya Mizuguchi
Kazuhiro Oba
Kazuhiro Bessho
Tetsuya Yamamoto
Hiroshi Kano
Application Number:
JP2002106926A
Publication Date:
June 11, 2008
Filing Date:
April 09, 2002
Export Citation:
Assignee:
ソニー株式会社
International Classes:
B60S5/00; H01L43/08; B21D1/12; G01R33/09; G11C11/15; H01F10/16; H01F10/187; H01F10/30; H01F10/32; H01L21/8246; H01L27/105; H01L27/22; H01L43/10
Domestic Patent References:
| JP2003133614A | ||||
| JP2001237472A | ||||
| JP2000076844A | ||||
| JP2000187976A | ||||
| JP2000101164A | ||||
| JP2002092829A | ||||
| JP2003060258A |
Foreign References:
| US20020036876 |
Attorney, Agent or Firm:
Yoshitsuno Kakuda
Hironobu Isoyama
Hironobu Isoyama
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