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Title:
MAGNETRON SPUTTERING SYSTEM, AND THIN FILM DEPOSITION METHOD
Document Type and Number:
Japanese Patent JP2007046124
Kind Code:
A
Abstract:

To provide a magnetron sputtering system capable of reducing the damage and temperature rising on the surface of a substrate, and also depositing a thin film on the surface of the substrate at a high speed by suppressing the collision of charged particles against the substrate, and to provide a thin film deposition method using the magnetron sputtering system.

The space between a target 3 and a substrate 4 is provided with a freely movable grid electrode 9. A thin film is deposited for a fixed time in a state where the grid electrode 9 lies between the target 3 and the substrate 4, and thereafter, a thin film is further deposited in a state where the grid electrode 9 is not interposed between the target 3 and the substrate 4.


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Inventors:
YAMADA MINORU
ISHIDA HIDEMI
OKADA TAKUYA
Application Number:
JP2005233000A
Publication Date:
February 22, 2007
Filing Date:
August 11, 2005
Export Citation:
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Assignee:
HITACHI SHIPBUILDING ENG CO
FUJI DAIICHI SEISAKUSHO KK
International Classes:
C23C14/44
Domestic Patent References:
JP2003313662A2003-11-06
JP2002080963A2002-03-22
JPH06136527A1994-05-17
JP2005002382A2005-01-06
Attorney, Agent or Firm:
Norihiko Hibi
Einosuke Kishimoto
Akira Watanabe
Kiyosue Yasuko



 
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