PURPOSE: To obtain the title phosphor which is free from temp. quenching and film burning by substituting a portion of SiO2 with GeO2 and B2O3 and further with a substance having high electric conductivity, such as.TiO2, SnO2 or WO2, and adding CeO2 to the resultant product.
CONSTITUTION: The title phosphor is obtd. by preparing the compsn. to meet formula I (wherein M is Ti, Sn, W, In, Ga, Tl, or Mo, N is.Tb, La, Y, Gd, Sb, Bi, Ni, Co, Al or P, u satisfies relationship II, v satisfies relationship III, w satisfies relationship IV, x satisfies relationship V, y satisfies relationship VI and z satisfies relationship VII). It is possible to improve the thermal conductivity of the matrix by substituting a portion of SiO2 with GeO2 and B2O3 and further with a substance having high electric conductivity, such as TiO2, SnO2 or WO3. Also, it is possible to take counter-measures to burning by adding CeO2 to the resultant product. Accordingly, it is possible to develop a phosphor highly excellent in temp. characteristics and burning counter-measures as compared to those of conventional products.
MORIMOTO KOJI
UCHIMURA KATSUNORI
