Title:
MANUFACTURE OF BLUE LIGHT EMITTING ELEMENT USING COMPOUND SEMICONDUCTOR
Document Type and Number:
Japanese Patent JP3165374
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To make such an etching gas that becomes the object of fluorocarbon gas control unnecessary by etching a second clad layer and an active layer composed of gallium nitride semiconductors with an etching gas containing boron trichloride and chlorine.
SOLUTION: After a sapphire substrate 100 is set on a quartz plate 17, a vacuum chamber 11 is evacuated to a vacuum. Then boron trichloride BC3 and chlorine C2 are respectively introduced to the chamber 11 at rates of 50sccm and 5sccm through a first reaction gas introducing pipe 13 and a second reaction gas introducing pipe 13 and high-frequency electric power of 13.56MHz in frequency is supplied between first and second electrodes. As a result, the plasma of the reaction gases is generated in the chamber 11 and the laminated body of the gallium nitride semiconductors can be dry-etched. Therefore, a dry etching method which can etch a wide range of semiconductors, especially, GaN compound semiconductors without using such an etching gas that becomes the object of the fluorocarbon gas control can be realized.
More Like This:
Inventors:
Koichi Nitta
Sumio Ishimatsu
Sumio Ishimatsu
Application Number:
JP23068896A
Publication Date:
May 14, 2001
Filing Date:
August 30, 1996
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
C23F1/00; C23F4/00; H01L21/302; H01L21/3065; H01L33/12; H01L33/32; H01L33/42; H01S5/00; H01S5/02; H01S5/042; H01S5/323; (IPC1-7): H01L33/00; H01L21/3065; H01S5/02
Domestic Patent References:
| JP8255952A | ||||
| JP8255951A | ||||
| JP63136526A | ||||
| JP434929A | ||||
| JP60202941A |
Other References:
Ａｐｐｌ Ｐｈｙｓ Ｌｅｔｔ Ｖｏｌ．６６ Ｎｏ．２４（１９９５）ｐ．３３２８−３３３０
Attorney, Agent or Firm:
Hidekazu Miyoshi (3 outside)