PURPOSE: To manufacture a compound semiconductor device with the satisfactory yield without causing the deterioration of a Schottky characteristic owing to thermal response and Schottky electrode configuration failure and the like by forming a Schottky electrode at a specific position in an electrode forming opening part of a first insulating film.

CONSTITUTION: An SiO2 film as an ion implantation mask layer is provided on an n-GaAs epitaxial layer 22, and doping region window formation is formed using a photolithography technique. Then, after Si+ ion is doped, the SiO2 film is removed with annealing to form an n+ ion implantation region 23. Then, an SiO2 film 24 is provided anew, and a Schottky electrode 25 window is formed by a photolithography technique. Thereupon, the amount of overetching of the SiO2 film 24 is controlled upon electrode window formation such that an interval ranges in a region from 0.8 to 4.0μm. With such control a high yield compound semiconductor device is manufactured without deteriorating Schottky characteristics in a heat treatment process after a Ti/Pt/Au Schottky electrode 25 is formed.