Title:
MANUFACTURE OF GATE OXIDE FILM IN MOS SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3202401
Kind Code:
B2
Abstract:
PURPOSE: To form a gate oxide film whose elapsed breakdown characteristic is excellent by regulating the flow rate of hydrogen gas and oxygen gas which are supplied to a burner in such a way that a steam partial pressure inside an oxidation furnace becomes a specific atmospheric pressure.
CONSTITUTION: As a silicon wafer on which a gate oxide film is to be formed, a wafer which is of a P-type conductivity type, having a (100) plane orientation and on which a field oxide film has been formed by a LOCOS method is used. A steam partial pressure in a mixed gas of oxygen and steam which are supplied to a quartz tube is expressed as a partial pressure when the total pressure of the mixed gas inside the quartz tube is set at one atmospheric pressure. Then, the partial pressure is set at 0atm., 0.062atm., 0.105atm., 0.222atm. and 0.556atm., and the gate oxide film is formed. When a Qbd at a cumulative failure rate of 50% is expressed by putting the steam partial pressure inside an oxidation furnace on the horizontal axis, it is found out that the Qbd is dependent on the steam partial pressure. When the steam partial pressure inside the oxidation furnace in pyrogenic oxidation method is set at 0.1 to 0.3atm., the gate oxide film whose Qbd is excellent can be formed.
Inventors:
Naoki Kawabata
Application Number:
JP9220993A
Publication Date:
August 27, 2001
Filing Date:
March 26, 1993
Export Citation:
Assignee:
株式会社リコー
International Classes:
H01L21/316; H01L29/78; (IPC1-7): H01L29/78; H01L21/316
Domestic Patent References:
| JP63313824A | ||||
| JP212821A |
Attorney, Agent or Firm:
Shigeo Noguchi
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