Title:
MANUFACTURE OF GERMANIUM LIGHT RECEIVING ELEMENT
Document Type and Number:
Japanese Patent JPS59188980
Kind Code:
A
Abstract:
PURPOSE:To obtain a high speed response element from a long wavelength band by a method wherein Zn ions are implanted to an N type Ge substrate wherein a net donor concentration is specified and are heat-treated, thus forming a high concentration Zn ion activated region and a low concentration one at the same time. CONSTITUTION:Zn ions are implanted to the N type Ge substrate 1 whose net donor concentration is 1X10<15>/cm<3>-4X10<15>/cm<3> by ion implantation, passing through the process of heat treatment at 897 deg.C for 30min in the atmosphere of nitrogen, and accordingly the relatively high concentration Zn ion activated region 17 and the relatively low concentration one 18 are formed at the same time. Thereafter, a guard ring 16 is formed by diffusing Zn under the condition of 650 deg.C and 9hr by thermal diffusion method. As a surface protection film 13, Si dioxide is adhered by CVD method, and the P side electrode 14 and the N side electrode 15 are vapor-deposited. Thus, an avalanche photodiode of a P-I-N structure can be manufactured, resulting in the production of the titled element of high speed response from the light response property at the wavelength of 1.55mum.
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Inventors:
NIWA MASARU
TORIKAI TOSHITAKA
TORIKAI TOSHITAKA
Application Number:
JP6318483A
Publication Date:
October 26, 1984
Filing Date:
April 11, 1983
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L31/107; (IPC1-7): H01L31/10
Attorney, Agent or Firm:
Uchihara Shin