PURPOSE: To make the title film have great electron mobility and to use it for magnetoelectric transducer by sticking indium whose thickness is specified onto a substrate having insulating surface, and then depositing indium and antimony at the same time.
CONSTITUTION: A cleaned insulating substrate is heated to the temperature of 350-450°C, and indium is deposited under vacuum within the range of 20-500 in thickness on the heated substrate, and successively indium and antimony are deposited under vacuum at the same time in the conditions that the antimony is larger than the indium in deposition speed so as to form an indium antimony film 2-4μm in thickness. This way, the indium antimony film, which has great electron mobility and with which a magnetoelectric transducer can be manufactured in a simple process, can be manufactured.
SAMEJIMA MASANORI
KORECHIKA AKIHIRO
| JPS6439018A | 1989-02-09 | |||
| JPS50146269A | 1975-11-22 |