MANUFACTURE METHOD OF COMPOUND SEMICONDUCTOR SINGLE CRYSTAL AND SINGLE CRYSTAL SUBSTRATE USING SUCH METHOD

Title:

MANUFACTURE METHOD OF COMPOUND SEMICONDUCTOR SINGLE CRYSTAL AND SINGLE CRYSTAL SUBSTRATE USING SUCH METHOD

Document Type and Number:

Japanese Patent JPH07273048

Kind Code:

A

Abstract:

PURPOSE: To provide a method for the manufacture of a III-V nitrogen compound semiconductor single crystal having such a thickness that it is capable of being divided in the direction of thickness for use, and a method for the manufacture of single crystal substrates using such a compound semiconductor single crystal.

CONSTITUTION: A buffer layer is formed on a substrate, and a single crystal of compound semiconductor of a III-group typical element and nitrogen, is grown on the buffer layer by vapor phase epitaxial growth. This method for the manufacture of compound semiconductor single crystals uses a chloride of a III-group typical element and NH3 for material gas, 1000-1200°C for crystal growth temperature and five hours or longer for crystal growth time. This obtains a single crystal of a compound semiconductor of III-group typical element and nitrogen, having a thickness of 500μm or above in the direction of crystal growth. The obtained single crystal of the compound semiconductor of the III-group typical element and nitrogen, is divided in the direction opposed to that of crystal growth to obtain single crystal substrates.

Inventors:

ITO HIROTAKA
TADATOMO KAZUYUKI
WATABE SHINICHI
HIRAMATSU KAZUMASA

Application Number:

JP6323894A

Publication Date:

October 20, 1995

Filing Date:

March 31, 1994

Export Citation:

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Assignee:

MITSUBISHI CABLE IND LTD

International Classes:

C30B25/18; C30B29/38; H01L21/205; (IPC1-7): H01L21/205; C30B25/18; C30B29/38

Attorney, Agent or Firm:

Takashima Hajime

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