Title:
MANUFACTURE OF PHOTOVOLTAIC DEVICE
Document Type and Number:
Japanese Patent JP3363504
Kind Code:
B2
Abstract:
PURPOSE: To obtain a photovoltaic device high in reproducibility by a method wherein an electric power in a specific range of low frequency is applied to an I-type non-single crystal semiconductor layer kept at a specific temperature or below to generate a glow discharge plasma, and a direct current voltage is applied to form an I/P or an I/N semiconductor junction keeping the semiconductor layer at a negative potential.
CONSTITUTION: An I-type non-single crystal semiconductor layer 103 is kept at a temperature of 200°C or below, electric power of low frequencies of 1 to 1000kHz is supplied to it to generate a glow discharge plasma. A direct current voltage (50 to 100V) is applied keeping the I-type non-single crystal semiconductor layer 103 at a negative potential, whereby an I/P or an I/N semiconductor junction is formed. By this setup, a photovoltaic device of large area uniform in characteristics can be obtained high in reproducibility.
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Inventors:
Shotaro Okabe
Application Number:
JP3911093A
Publication Date:
January 08, 2003
Filing Date:
February 26, 1993
Export Citation:
Assignee:
Canon Inc
International Classes:
H01L31/04; (IPC1-7): H01L31/04
Domestic Patent References:
| JP4333289A | ||||
| JP3214620A | ||||
| JP2276241A | ||||
| JP5997514A |
Attorney, Agent or Firm:
Hisao Fukumori