To permit high-precision manufacture of a field emission type cathode in a plane type display device.

This manufacturing method has a process in which a first electrode 11 and an electron emission part 9 on the first electrode 11 are formed on the surface of a substrate 1, and an insulating layer 7 is formed on the region containing the first electrode 11 and the electron emission part 9, and an electrode layer 121 used as a second electrode is formed on the insulating layer 7, a process in which a negative type photoresist layer 30 is formed on the whole surface containing the electrode layer 121, and the photoresist layer 30 is exposed by irradiation of an ultraviolet ray 31 from the back of the substrate 1 by using the electron emission part 9 as a mask, and developed to thereby remove selectively a photoresist layer 301 of a part corresponding to the electron emission part 9, and a process in which selective etching of the electrode layer 121 and the insulating layer 7 is executed by using the remaining photoresist layer 301 as a mask, to thereby form an opening for exposing the electron emission part 9.