MANUFACTURE OF SEMICONDUCTOR DEVICE

Title:

MANUFACTURE OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPH07106282

Kind Code:

A

Abstract:

PURPOSE: To reduce the aspect ratio of a contact hole of a semiconductor device, and improve the step coverage at the time of film formation.

CONSTITUTION: When a contact hole 3 is bored and a wiring layer is formed, a Ti film 4 is formed on an insulating film 2 and the inner whole surface of the contact hole by sputtering. By using an ion milling equipment for oblique incidence to a water, the Ti film 4 on the insulating film 2 and the contact hole side surface 3a is selectively etched off. The aspect ratio is reduced by the bottom rise of the contact hole 3. An TiON film is formed by sputtering. The TiON film except on the contact hole bottom wall 3b is etched off by ion milling, and an Al alloy wiring film is formed. As a result of reduction of aspect ratio, the step coverage is improved.

Inventors:

YAMADA HIROSHI

Application Number:

JP26546593A

Publication Date:

April 21, 1995

Filing Date:

September 30, 1993

Export Citation:

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Assignee:

SONY CORP

International Classes:

H01L21/285; H01L21/28; H01L21/768; H01L23/522; (IPC1-7): H01L21/285; H01L21/768

Attorney, Agent or Firm:

Mitsuo Takahashi

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