Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH1117024
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which lessens such troubles that the etching residues of a gate electrode-forming material appear on a gate insulation film of one transistor, or the gate insulation film is broken at etching for forming gate electrodes, and which permits the etching process margin to increase. SOLUTION: The method of manufacturing a semiconductor device having an NMOS transistor having an n-type gate electrode, and PMOS transistor having a p-type gate electrode on the same substrate, comprises implanting ions of impurities in etching regions 4b of a gate electrode layer 4 formed on a semiconductor substrate 3 through a gate insulation layer 2, so that the impurity compsns. of the regions 4b are equal or nearly equal, and etching the regions 4b to form specified pattern of gate electrodes 4a.
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Inventors:
NAKAYAMA SO
Application Number:
JP16879197A
Publication Date:
January 22, 1999
Filing Date:
June 25, 1997
Export Citation:
Assignee:
SONY CORP
International Classes:
H01L21/302; H01L21/265; H01L21/3065; H01L21/8238; H01L27/092; H01L29/78; (IPC1-7): H01L21/8238; H01L21/265; H01L21/3065; H01L27/092; H01L29/78
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