Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5587429
Kind Code:
A
Abstract:
PURPOSE:To obtain a pn-junction whose life time is controlled, by forming a non- crystalline layer having a specified thickness by injecting Si ions in a one-conductive monocrystal layer which is grown on an Si monocrystal substrate, then, injecting reverse-conductive impurity ions, thereafter performing heat treatment. CONSTITUTION:An n-type layer 2 is epitaxially grown on an n<+> Si substrate 1, and a non-crystalline layer 3 reaching a specified depth is yielded on the layer 2 by injecting Si<+> ions. Then, a p-type region 4 is formed on the surface of the layer 3 by injecting BF2<+> ions, heat treatment is performed in N2 atmosphere at 450-600 deg.C for about 100 minutes, and a crystal-lattice defect layer 5 is remained near the boundary between layers 2 and 3. Thereafter, a switching diode is made by using the substrate obtained by this method. A switching speed of 10musec with errors of about 20% can be obtained owing to the presence of the defect layer 5, and dispersion in speed is very small compared with that of normal Au diffusion.
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Inventors:
TATSUTA SHIGERU
SAKURAI TERUO
HASHIMOTO TOSHIO
SAKURAI TERUO
HASHIMOTO TOSHIO
Application Number:
JP16315778A
Publication Date:
July 02, 1980
Filing Date:
December 26, 1978
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/26; H01L21/265; H01L21/322; H01L21/324; (IPC1-7): H01L21/265; H01L21/322; H01L21/324