Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS56129323
Kind Code:
A
Abstract:
PURPOSE:To try the improvement of adhesiveness and resolution by stacking a positive photosensitive film on the predetermined pattern of a negative photosensitive film with a film thickness of 5,000Angstrom or less wherein the same pattern is formed. CONSTITUTION:An SiO2 layer 2 is provided on an Si substrate and a negative resist layer 13 is formed with a thickness of 5,000Angstrom or less to make a predetermined pattern. A positive resist layer 23 is stacked on the layer 13 with a thickness of about 1.6mu by covering an opening 14 to form the same pattern and an opening 24 is made by uniting with the opening 14. In this composition, resolution will be improved by thinly forming the negative photosensitive film having low resolution and adhesion to the substrate will also be improved by good adhesiveness. Furthermore, generating pinholes are closed by the positive photosensitive film. Therefore, this method is of great advantage to the high density and miniaturization of a device.
Inventors:
INOUE YOSHIAKI
Application Number:
JP3266080A
Publication Date:
October 09, 1981
Filing Date:
March 17, 1980
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
G03F7/20; H01L21/027; H01L21/312; (IPC1-7): H01L21/30
Domestic Patent References:
| JPS5080834A | 1975-07-01 |