Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS56142630
Kind Code:
A
Abstract:
PURPOSE:To decrease thermal strain between an insulating film made up on a substrate and a semiconductor film built up on the insulating film by annealing the semiconductor film by the first laser while annealing said insulating film by the second laser. CONSTITUTION:SiO2 2 and polycrystal Si 3 are formed on a single crystal Si subsrate 1 successively, the polycrystal Si 3 is annealed by a ruby laser 5' while the SiO2 2 is annealed by irradiating a CO2 laser 6, and temperature difference between the polycrystal Si 3 and the SiO2 2 is made 400 deg.C or less. Thus, thermal strain between the polycrystal Si 3 and the SiO2 2 can be decreased, and the deterioration of the characteristics of a semiconductor element resulting from thermal strain is reduced.
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Inventors:
MORI HARUHISA
KAMIOKA HAJIME
NAKANO MOTOO
SASAKI NOBUO
KAMIOKA HAJIME
NAKANO MOTOO
SASAKI NOBUO
Application Number:
JP4569480A
Publication Date:
November 07, 1981
Filing Date:
April 09, 1980
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L29/78; H01L21/20; H01L21/208; H01L21/263; H01L21/268; H01L21/321; H01L21/324; (IPC1-7): H01L21/263; H01L21/324; H01L29/78
Domestic Patent References:
| JPS49111585A | 1974-10-24 | |||
| JP42012087A |