Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5940539
Kind Code:
A
Abstract:
PURPOSE:To produce a semiconductor device with high reliability at low cost by a method wherein a semiconductor body excluding its main surface is buried in a hole of substrate with insulating material to heap the laminating layers whereon electrolytic copper foil is stuck on a polyimide film connecting to semiconductor pellet through the opening of the substrate. CONSTITUTION:A band-like sheet 9 with adhesive layer 8 is stuck on a substrate 7 with a hole 6 arrayed and finished very precisely then an Si pellet 10 is inserted into the hole 6 and a polyimide resin 11 is buried in the gap between them and the surface of the substrate 7 is flattened and after hardening the whole body, the sheet 9 is peeled off. Another hole 14 is opened in a polyimide film 12 corresponding to the electrode of the pellet 10 and a laminating layer coated with an external lead 13 made of electrolytic copper foil is provided corresponding to the hole 14. Firstly the film 12 is stuck on the substrate 7 to be connected 15 collectively at one time by means of plating process. Secondly the whole body is covered with the polyimide resin films 16, 17 print-forming a solder electrode 18. Finally the process is finished by means of dicing. In such a constitution, the pellet of normal Al electrode may be finished into wireless flip chip structure at low cost producing a semiconductor device with high reliability.
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Inventors:
ABE TOORU
TAKAGI TAKESHI
IIDA SATOSHI
TAKAGI TAKESHI
IIDA SATOSHI
Application Number:
JP14927582A
Publication Date:
March 06, 1984
Filing Date:
August 30, 1982
Export Citation:
Assignee:
HITACHI IRUMA DENSHI KK
International Classes:
H01L21/60; (IPC1-7): H01L23/48
Attorney, Agent or Firm:
Toshiyuki Usuda
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