Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS62262471
Kind Code:
A
Abstract:
PURPOSE:To built a semiconductor light-emitting element free of stress that may otherwise be applied to its light-emitting region by a method wherein an insulating substrate is formed to have prescribed thickness, subjected to necessary manufacturing processes, and then electrodes are built on the substrate and a window layer. CONSTITUTION:On a semi-insulating GaAs substrate 1, a light-trapping layer 2, activation layer 3, and window layer 4 are formed, in that order. The GaAs substrate 1 is subjected to polishing that is performed on its front surface, as the result of which a prescribed thickness (l) is retained. A portion of the GaAs substrate 1 just on a light-emitting region 9 is subjected to etching for the formation of an opening 11. In the opening 11, a titanium-gold-platinum p-type electrode 5 is built. On the surface of the window layer 4, a chromium- gold N-type electrode 6 is built. On the GaAs substrate 1, a gold heat sink 8 is formed. This design prevents stress from being generated in the vicinity of the rear-side P-type electrode 5 attributable to heat produced by a light- emitting element in operation, preventing the light-emitting region 9 from stress that may otherwise be applied thereto and protecting optical output from reduction.
Inventors:
MAEKAWA HIROSHI
Application Number:
JP10621286A
Publication Date:
November 14, 1987
Filing Date:
May 08, 1986
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/28; H01L21/44; H01L33/14; H01L33/30; H01L33/40; (IPC1-7): H01L21/44; H01L33/00
Attorney, Agent or Firm:
Sadaichi Igita