PURPOSE: To add only specific atoms or molecules to a semiconductor crystal as an impurity to obtain the semiconductor crystal having high quality by changing the progressive directions only of specific atoms or molecules by irradiating corpuscular beams with laser beams and separating specific atoms or molecules from the corpuscular beams.
CONSTITUTION: In a device for adding nitrogen atomic ions 9 to a zinc selenide crystal 1 during growth, a gas containing nitrogen atomic ions acquired by decomposing ammonia gas by electric discharge is discharged as corpuscular beams 8 from a corpuscular beam source 7. The progressive direction of corpuscular beams 8 is not directed toward the zinc selenide crystal 1. When laser beams 10 from a krypton laser 2 enter a vacuum vessel 13 through a window 12 and cross with corpuscular beams 8, only nitrogen atomic ions absorb laser beams 10, the progressive direction thereof is changed and nitrogen atomic ions are turned into nitrogen atomic ion beams 9 and the zinc selenide crystal 1 is irradiated with nitrogen atomic ion beams 9. Accordingly, only nitrogen atomic ions can be added as an impurity in the zinc selenide crystal 1 from the inside of corpuscular beams 8.
| JPH0693436 | SPUTTERING METHOD |
| JPH0647014 | [Name of device] Image heating device |
| JP4450202 | Semiconductor manufacturing method |
MITSUYU TSUNEO
YAMAZAKI OSAMU
