Title:
MANUFACTURE OF SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3127866
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To control diffusion of impurities into a diffusion layer by a method, wherein a silicon nitride film is deposited on a storage node electrode, a silicon film is deposited thereon, and they are oxidized.
SOLUTION: After a field oxide film 102, a gate oxide film 103, a gate electrode 104 and N-types diffused layers 105 and 106 have been formed on a P-type silicon substrate 101, an interlayer insulating film 107 and bit line 108 are formed thereon. After the deposition of a silicon film by an LPCD method, a storage node electrode 109 is formed by performing dry etching using a photoresist film as a mask. Then, a silicon nitride film 110 is deposited using an LPCD method, and an amorphous silicon film 111 is deposited at the temperature of 500 to 550°C through the LPCD method. A rapid thermal oxidation operation is conducted on the amorphous silicon film 111 for 20 to 40 seconds in the oxidation atmosphere of 800 to 1,000°C, and a silicon oxide film 111 is formed. The time for the heat treatment can be made short and the heat treatment can be performed at a low temperature using amorphous silicon, etc., and the diffusion of impurities on a diffusion layer can be controlled.
Inventors:
Shuji Fujiwara
Toshiyuki Hirota
Toshiyuki Hirota
Application Number:
JP32515897A
Publication Date:
January 29, 2001
Filing Date:
November 12, 1997
Export Citation:
Assignee:
NEC
International Classes:
H01L21/31; H01L21/318; H01L21/8242; H01L27/108; (IPC1-7): H01L27/108; H01L21/31; H01L21/318; H01L21/8242
Domestic Patent References:
| JP555198A |
Attorney, Agent or Firm:
Shiroyuki Hori