Title:
MANUFACTURE OF SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JPH05144936
Kind Code:
A
Abstract:
PURPOSE: To acquire a method for removing a step between an element region and an isolation region of a substrate.
CONSTITUTION: A part which becomes an isolation region of a substrate 21 is etched using a resist mask 22 and a channel stop layer 23 is formed by performing ion implantation for the etching part using the mask again. After the resist mask 22 is removed, a dielectric isolation film 24 is deposited all over. Thereafter, the insulating film is mechanically polished and a substrate surface is exposed.
Inventors:
USAMI TAKASHI
Application Number:
JP30619291A
Publication Date:
June 11, 1993
Filing Date:
November 21, 1991
Export Citation:
Assignee:
OKI ELECTRIC IND CO LTD
International Classes:
H01L21/304; H01L21/76; (IPC1-7): H01L21/304; H01L21/76
Attorney, Agent or Firm:
Toshiaki Suzuki