To collectively inspect the electrode pads having a large area of a wafer to be inspected by forming such a beam or diaphragm structure that probes are changed by pressing forces in a substrate on which the probes are formed and pressing or fixing the wafer in which the electrode pads are formed.
A plurality of probes 13 is formed in an inspection wafer 11 by forming a coating film on the surface of a silicon substrate and, after the film is patterned by photolithography, a plurality of probes 13 by etching. Then, after the coating film is removed, diaphragms 12 are formed at every probe 13 in the same process. In the same process, in addition, through holes 14 are formed correspondingly to the probes 13 and wiring 16 is formed from the probes 13 to secondary-side electrode pads 17 through the through holes 14. The electrode pads 17 are connected to POGO pins 25 and the wafer 11 fixed to a pressing mechanism supporting substrate 23 is pressed against a wafer 21 to be inspected on a wafer fixing stage 22. Therefore, the probes 13 can evenly inspect the primary-side electrode pads 23 of the wafer 21 for electric characteristics, because the probes 13 come into contact with the electrodes pads 23, resulting in the deformation of the diaphragms 12, and a fixed load is applied between the probes 13 and electrode pads 23.
KANAMARU MASATOSHI
KONO RYUJI
ENDO KIJU
ARIGA AKIHIKO
BAN NAOTO
AOKI HIDEYUKI
