MANUFACTURE OF SEMICONDUCTOR LASER DEVICE

Title:

MANUFACTURE OF SEMICONDUCTOR LASER DEVICE

Document Type and Number:

Japanese Patent JPS6084894

Kind Code:

A

Abstract:

PURPOSE: To improve the yield by elimination of variation by a method wherein an active layer is formed while a substrate for growth is moved successively smoothly in a solution for growth.

CONSTITUTION: An N-Ga1-yAlyAs (0.2≤y≤0.7) layer 52 having a film thickness of 1.0∼3.0μm at the groove shoulder is formed on the N-GaAs substrate 51 having a stripe groove (recess) 511 3∼6μm wide and 1∼2μm deep. Next, on a clad layer 52, a hang-down active layer 53 of crescent form is formed of Ga1-xAlxAs (0≤x≤0.35) by corresponding to the groove. Then, another clad layer 54 is formed of P-Ga1-yAlyAs (0.2≤y≤0.7) having a film thickness of 1.0∼3.0μm at a thin part on the clad layer at the part other than on the active layer and the groove. A stripe electrode 55 is formed on the clad layer 54, and an electrode 56 on the substrate back. Further, the photo resonator is formed by cleavage in both surfaces of the crystal rectangularly intersecting with the groove.

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Inventors:

KURODA TAKAROU
KAJIMURA TAKASHI
KASHIWADA YASUTOSHI
UMEDA JIYUNICHI
AIKI KUNIO

Application Number:

JP19250184A

Publication Date:

May 14, 1985

Filing Date:

September 17, 1984

Export Citation:

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Assignee:

HITACHI LTD

International Classes:

H01L21/208; H01S5/00; H01S5/223; H01S5/24; (IPC1-7): H01L21/208; H01S3/18

Domestic Patent References:

JPS502504U

1975-01-11

Attorney, Agent or Firm:

Katsuo Ogawa (1 person outside)

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