Title:
MANUFACTURE OF SEMICONDUCTOR LIGHT EMITTING ELEMENT
Document Type and Number:
Japanese Patent JPS55163884
Kind Code:
A
Abstract:
PURPOSE:To easily form an electrode layer in a semiconductor light emitting element and increase the coating strength thereof by etching the main surface of a light emitting substrate formed with a PN-junction to form a rough surface thereon and then forming an electrode layer thereon to divide it into pellets. CONSTITUTION:The main surface of GaP light emitting substrate formed with a PN-junction is etched with mixed acid solution selected arbitrarily from hydrochloric acid, nitric acid fluoric acid or the like to form rough surface thereon. This rough surface become rugged with an etching depth of several ten order microns. Then, after coating predetermined pattern of metallic electrode layer, the substrate is diced or divided by means such as scribing or the like to form pellets.
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Inventors:
SEKIWA TETSUO
Application Number:
JP7014879A
Publication Date:
December 20, 1980
Filing Date:
June 06, 1979
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
H01L21/28; H01L21/301; H01L21/306; H01L33/22; H01L33/30; (IPC1-7): H01L21/283; H01L21/306; H01L21/78; H01L33/00