Title:
MANUFACTURE OF SEMICONDUCTOR PRESSURE SENSOR
Document Type and Number:
Japanese Patent JPH01173847
Kind Code:
A
Abstract:
PURPOSE:To prevent the slow leak trouble of the title semiconductor pressure sensor and to accurately measure pressure by specifying the thickness of a Ti layer and a Pt layer forming a metallic thin film layer on the reverse surface of the pedestal of a sensor which is joined with the top surface of the semiconductor pressure sensor. CONSTITUTION:The sensor chip 10 is joined with the top surface of the pedestal 12 of the semiconductor pressure sensor and adhered to the top surface of a base 16. In this adhering process, the metallic thin film layer 20 is formed of the Ti layer 21 and Pt layer 22 on the reverse surface of the pedestal 12 and adhered to the base 16 with metallic solder 24. The thickness of the Ti layer 21 of the thin film layer 20 of this pressure sensor is set to <=2,500Angstrom and the thickness of the Pt layer 22 is set to 1,000-2,500Angstrom . The adhesive strength between the Ti layer 21 and Pt layer 22 is improved to prevent the slow leak trouble of the semiconductor sensor, thereby obtaining the reliable sensor.
Inventors:
ITO TATSUYA
Application Number:
JP33649987A
Publication Date:
July 10, 1989
Filing Date:
December 28, 1987
Export Citation:
Assignee:
FUJIKURA LTD
International Classes:
G01L9/04; G01L9/00; (IPC1-7): G01L9/04
Domestic Patent References:
| JPS6272178A | 1987-04-02 | |||
| JPS58219427A | 1983-12-20 |
Attorney, Agent or Firm:
Keiji Kunihira
Previous Patent: MANUFACTURE OF THIN FILM PRESSURE SENSOR
Next Patent: TRAVEL RESISTANCE SETTING DEVICE
Next Patent: TRAVEL RESISTANCE SETTING DEVICE