Title:
MANUFACTURE OF SEMICONDUCTOR PRESSURE SENSOR
Document Type and Number:
Japanese Patent JPH01225180
Kind Code:
A
Abstract:
PURPOSE:To obtain a semiconductor pressure sensor having good and smooth dimensional reproducibility and no stress concentration by initially forming most of a recess by anisotropical etching, and then finishing the bottom of a diaphragm by isotropically etching to form a circular diaphragm. CONSTITUTION:A silicon substrate 12 formed with a semiconductor gauge 13 and a mask 14 is initially roughly processed by anisotropically etching with good dimensional reproducibility and flat face of a diaphragm 17. Then, it is electrolytically etched by dipping it in a isotropic etchant utilizing the fact that the etching degree is different according to the difference of current density, the bottom of the diaphragm 17 of a rectangular state formed by anisotropically etching is finished in a circular state, and corners are removed. Thus, a high breakdown strength semiconductor pressure sensor having good dimensional reproducibility and flat face of the diaphragm 17 can be obtained.
More Like This:
| JPH11304620 | PRESSURE SENSOR |
| JP2525433 | [Title of Invention] Semiconductor strain gauge type pressure sensor |
| JPH06288850 | PRESSURE SENSOR |
Inventors:
FUKUHARA SATOSHI
Application Number:
JP5081888A
Publication Date:
September 08, 1989
Filing Date:
March 04, 1988
Export Citation:
Assignee:
YOKOGAWA ELECTRIC CORP
International Classes:
G01L9/04; G01L9/00; H01L29/84; H01L41/08; (IPC1-7): G01L9/04; H01L29/84; H01L41/08
Attorney, Agent or Firm:
Shinsuke Ozawa