Title:
MANUFACTURE OF SEMICONDUCTOR WAFER
Document Type and Number:
Japanese Patent JPS6140033
Kind Code:
A
Abstract:
PURPOSE:To realize a circular semiconductor wafer by a minimized manufacturing process by a method wherein the exterior of a semiconductor crystal ingot is first formed into a polygon and then the circumference is worked on of a wafer obtained by slicing the polygonal ingot. CONSTITUTION:An ingot 1 with its exterior formed into a polygon is sliced obliquely so that a resultant polygonal wafer 2 may approximates a circular wafer 3. In this way, a numbver of wafers may be produced efficiently out of a single ingot by a minimized process. Possibilities are lowered for a brittle compound semiconductor single crystal such as a GaAs single crystal to experience a crack or break, which ensures highly efficient production of wafers.
Inventors:
MARUYAMA TAKATOSHI
Application Number:
JP16168984A
Publication Date:
February 26, 1986
Filing Date:
July 31, 1984
Export Citation:
Assignee:
HITACHI CABLE
International Classes:
C30B33/00; H01L21/304; H01L29/04; (IPC1-7): C30B33/00; H01L21/304